description
VISHAY - SQS407ENW-T1_GE3 - Power MOSFET, N Channel, 20 V, 6 A, 0.0265 ohm, SOT-23, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 6A
- Drain Source Voltage Vds: 20V
- On Resistance Rds(on): 0.0265ohm
- Rds(on) Test Voltage Vgs: 4.5V
- Threshold Voltage Vgs: 1V
- Power Dissipation Pd: 2.1W
- Transistor Case Style: SOT-23
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2019)