description
VISHAY - SIHD2N80AE-GE3 - Power MOSFET, N Channel, 800 V, 2.9 A, 2.5 ohm, TO-252 (DPAK), Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 2.9A
- Drain Source Voltage Vds: 800V
- On Resistance Rds(on): 2.5ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4V
- Power Dissipation Pd: 62.5W
- Transistor Case Style: TO-252
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: E-Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2019)