description
VISHAY - SIHB180N60E-GE3 - Power MOSFET, N Channel, 600 V, 19 A, 0.155 ohm, TO-263 (D2PAK), Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 19A
- Drain Source Voltage Vds: 600V
- On Resistance Rds(on): 0.155ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 5V
- Power Dissipation Pd: 156W
- Transistor Case Style: TO-263
- No. of Pins: 3Pins
- Operating Temperature Max: 50°C
- Product Range: E Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2019)