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VISHAY - SI1062X-T1-GE3 - Power MOSFET, N Channel, 20 V, 530 mA, 0.35 ohm, SC-89, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 530mA
- Drain Source Voltage Vds: 20V
- On Resistance Rds(on): 0.35ohm
- Rds(on) Test Voltage Vgs: 4.5V
- Threshold Voltage Vgs: 1V
- Power Dissipation Pd: 220mW
- Transistor Case Style: SC-89
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (20-Jun-2016)