description
STMICROELECTRONICS - SCT50N120 - Silicon Carbide MOSFET, Single, N Channel, 65 A, 1.2 kV, 0.052 ohm, HiP247
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 65A
- Drain Source Voltage Vds: 1.2kV
- On Resistance Rds(on): 0.052ohm
- Rds(on) Test Voltage Vgs: 20V
- Threshold Voltage Vgs: 3V
- Power Dissipation Pd: 318W
- Transistor Case Style: HiP247
- No. of Pins: 3Pins
- Operating Temperature Max: 200°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
