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description
IXYS SEMICONDUCTOR - DHG10I1200PA - Fast / Ultrafast Diode, 1.2 kV, 10 A, Single, 2.38 V, 75 ns, 70 A
- Repetitive Reverse Voltage Vrrm Max: 1.2kV
- Forward Current If(AV): 10A
- Diode Configuration: Single
- Forward Voltage VF Max: 2.38V
- Reverse Recovery Time trr Max: 75ns
- Forward Surge Current Ifsm Max: 70A
- Operating Temperature Max: 150°C
- Diode Case Style: TO-220AC
- No. of Pins: 2 Pin
- Product Range: DHG10 Series
- Automotive Qualification Standard: -
- SVHC: No SVHC (12-Jan-2017)
- Case Temperature Tc @ If: 85°C
- Current If @ Vf: 10A
- Current Ifsm: 70A
- Diode Type: Fast Recovery
- Forward Voltage: 2.38V
- Junction Temperature Tj Max: 150°C
- Junction to Case Thermal Resistance A: 1.8°C/W
- No. of Pins: 2Pins
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Pin Configuration: Single
- Reverse Recovery Time trr Typ: 75ns
- Termination Type: Through Hole
- Time on for IFSM: 10ms