Omschrijving
VISHAY - SISS60DN-T1-GE3 - Power MOSFET, N Channel + Schottky, 30 V, 181.8 A, 0.00109 ohm, PowerPAK 1212, Surface Mount
- Transistor Polarity: N Channel + Schottky
- Continuous Drain Current Id: 181.8A
- Drain Source Voltage Vds: 30V
- On Resistance Rds(on): 0.00109ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2.5V
- Power Dissipation Pd: 65.8W
- Transistor Case Style: PowerPAK 1212
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2019)