SIHG33N65E-GE3 MOSFET, N-CH, 650V, 32.4A, TO-247AC-3 VISHAY

VISHAY - SIHG33N65E-GE3 - Power MOSFET, N Channel, 650 V, 32.4 A, 0.09 ohm, TO-247AC, Through Hole

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 32.4A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 0.09ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs: 4V
• Power Dissipation Pd: 313W
• Transistor Case Style: TO-247AC
• No. of Pins: 3Pins
• Operating Temperature Max: 150°C
• Product Range: E-Series
• Automotive Qualification Standard: -
• MSL: MSL 1 - Unlimited