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VISHAY - SI4178DY-T1-GE3 - Power MOSFET, N Channel, 30 V, 12 A, 0.017 ohm, SOIC, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 12A
- Drain Source Voltage Vds: 30V
- On Resistance Rds(on): 0.017ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2.8V
- Power Dissipation Pd: 5W
- Transistor Case Style: SOIC
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (20-Jun-2016)