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NEXPERIA - PBSS4160DPN,115 - Bipolar (BJT) Single Transistor, NPN, PNP, 60 V, 1 A, 420 mW, SOT-457, Surface Mount
- Transistor Polarity: NPN, PNP
- Collector Emitter Voltage V(br)ceo: 60V
- Transition Frequency ft: 220MHz
- Power Dissipation Pd: 420mW
- DC Collector Current: 1A
- DC Current Gain hFE: 500hFE
- Transistor Case Style: SOT-457
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 110mV
- Continuous Collector Current Ic: 1A
- Gain Bandwidth ft Typ: 220MHz
- Hfe Min: 250
- No. of Pins: 6 Pin
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- RF Transistor Case: SOT-457
- Termination Type: Surface Mount Device
- Transistor Type: Low Saturation (BISS)