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IXYS SEMICONDUCTOR - IXA60IF1200NA - IGBT, 88 A, 2.1 V, 290 W, 1.2 kV, SOT-227B, 4 Pins
- DC Collector Current: 88A
- Collector Emitter Saturation Voltage Vce(on): 2.1V
- Power Dissipation Pd: 290W
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Transistor Case Style: SOT-227B
- No. of Pins: 4Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (12-Jan-2017)
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Max: 290W
- Transistor Type: IGBT