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VISHAY - IRFD120PBF - Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 1.3A
- Drain Source Voltage Vds: 100V
- On Resistance Rds(on): 0.27ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4V
- Power Dissipation Pd: 1.3W
- Transistor Case Style: DIP
- No. of Pins: 4Pins
- Operating Temperature Max: 175°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- Current Id Max: 1.3A
- Current Temperature: 25°C
- Device Marking: IRFD120PBF
- Full Power Rating Temperature: 25°C
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Lead Spacing: 2.54mm
- No. of Transistors: 1
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +175°C
- Pulse Current Idm: 10.4A
- Row Pitch: 7.62mm
- Voltage Vds Typ: 100V
- Voltage Vgs Max: 20V
- Voltage Vgs Rds on Measurement: 10V