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INFINEON - FF200R12KE4HOSA1 - IGBT Module, Dual [Half Bridge], 240 A, 1.75 V, 1.1 kW, 150 °C, Module
- Transistor Polarity: Dual NPN
- DC Collector Current: 240A
- Collector Emitter Saturation Voltage Vce(on): 1.75V
- Power Dissipation Pd: 1.1kW
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Transistor Case Style: Module
- No. of Pins: 7Pins
- Operating Temperature Max: 150°C
- Product Range: -
- SVHC: No SVHC (27-Jun-2018)
- Operating Temperature Min: -40°C