Description
STMICROELECTRONICS - STD2HNK60Z-1 - Power MOSFET, N Channel, 600 V, 2 A, 4.4 ohm, TO-251AA, Through Hole
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 2A
- Drain Source Voltage Vds: 600V
- On Resistance Rds(on): 4.4ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 3.75V
- Power Dissipation Pd: 45W
- Transistor Case Style: TO-251AA
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (17-Dec-2015)
- Avalanche Single Pulse Energy Eas: 120mJ
- Capacitance Ciss Typ: 280pF
- Current Iar: 2A
- Current Id Max: 2A
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Junction to Case Thermal Resistance A: 2.77°C/W
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Pulse Current Idm: 8A
- Termination Type: Through Hole
- Voltage Vds Typ: 600V
- Voltage Vgs Max: 30V
- Voltage Vgs Rds on Measurement: 10V
- Voltage Vgs th Max: 4.5V
- Voltage Vgs th Min: 3V
