SI4490DY-T1-GE3 MOSFET,N Ch,Diode,200V,4A,8-SOIC Vishay

VISHAYSKU: SI4490DY-T1-GE3 Order code: 1858959

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In stock (858 units), ready to be shipped

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Description

VISHAY - SI4490DY-T1-GE3 - Power MOSFET, N Channel, 200 V, 2.85 A, 0.065 ohm, SOIC, Surface Mount

  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 2.85A
  • Drain Source Voltage Vds: 200V
  • On Resistance Rds(on): 0.065ohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs: 2V
  • Power Dissipation Pd: 3.1W
  • Transistor Case Style: SOIC
  • No. of Pins: 8Pins
  • Operating Temperature Max: 150°C
  • Product Range: -
  • Automotive Qualification Standard: -
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (15-Jun-2015)
  • Current Id Max: 4A
  • Operating Temperature Min: -55°C
  • Operating Temperature Range: -55°C to +150°C
  • Voltage Vgs Max: 20V

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