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Description
VISHAY - SI4288DY-T1-GE3 - Dual MOSFET, N Channel, 40 V, 9.2 A, 0.0165 ohm, SOIC, Surface Mount
- Transistor Polarity: Dual N Channel
- Continuous Drain Current Id: 9.2A
- Drain Source Voltage Vds: 40V
- On Resistance Rds(on): 0.0165ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 1.2V
- Power Dissipation Pd: 3.1W
- Transistor Case Style: SOIC
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jun-2015)
- Continuous Drain Current Id, N Channel: 9.2A
- Drain Source Voltage Vds, N Channel: 40V
- Module Configuration: Dual
- On Resistance Rds(on), N Channel: 0.0165ohm
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
