SI2308BDS-T1-GE3 MOSFET, N Ch, 60V, 2.3a, SOT23-3 Vishay

VISHAYSKU: SI2308BDS-T1-GE3 Order code: 1838997

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Description

VISHAY - SI2308BDS-T1-GE3 - Power MOSFET, N Channel, 60 V, 2.3 A, 0.13 ohm, TO-236, Surface Mount

  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 2.3A
  • Drain Source Voltage Vds: 60V
  • On Resistance Rds(on): 0.13ohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs: 3V
  • Power Dissipation Pd: 1.09W
  • Transistor Case Style: TO-236
  • No. of Pins: 3Pins
  • Operating Temperature Max: 150°C
  • Product Range: -
  • Automotive Qualification Standard: -
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (15-Jun-2015)
  • Current Id Max: 1.9A
  • Operating Temperature Min: -55°C
  • Operating Temperature Range: -55°C to +150°C
  • Voltage Vgs Max: 20V

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