Documents et téléchargements
Description
VISHAY - SI1922EDH-T1-GE3 - Dual MOSFET, N Channel, 20 V, 1.3 A, 0.165 ohm, SOT-363, Surface Mount
- Transistor Polarity: Dual N Channel
- Continuous Drain Current Id: 1.3A
- Drain Source Voltage Vds: 20V
- On Resistance Rds(on): 0.165ohm
- Rds(on) Test Voltage Vgs: 4.5V
- Threshold Voltage Vgs: 400mV
- Power Dissipation Pd: 1.25W
- Transistor Case Style: SOT-363
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jun-2015)
- Continuous Drain Current Id, N Channel: 1.3A
- Drain Source Voltage Vds, N Channel: 20V
- Module Configuration: Dual
- On Resistance Rds(on), N Channel: 0.165ohm
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
