SCT10N120 - Silicon Carbide MOSFET, Single, N Channel, 12 A, 1.2 kV, 0.5 ohm, HiP247 - STMICROELECTRONICS

STMICROELECTRONICSSKU: SCT10N120 Order code: 3129687

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Sale price€17,42

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In stock (221 units), ready to be shipped

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Description

  • Channel Type: N Channel
  • Continuous Drain Current Id: 12A
  • Drain Source On State Resistance: 0.5ohm
  • Drain Source Voltage Vds: 1.2kV
  • Gate Source Threshold Voltage Max: 3.5V
  • MOSFET Module Configuration: Single
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 3Pins
  • On Resistance Rds(on): 0.5ohm
  • Operating Temperature Max: 200°C
  • Power Dissipation: 150W
  • Power Dissipation Pd: 150W
  • Product Range: -
  • Rds(on) Test Voltage: 20V
  • Transistor Case Style: HiP247
  • Transistor Polarity: N Channel

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