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Description
ONSEMI - FDC658P - Power MOSFET, P Channel, 30 V, 4 A, 0.041 ohm, SuperSOT, Surface Mount
- Transistor Polarity: P Channel
- Continuous Drain Current Id: -4A
- Drain Source Voltage Vds: -30V
- On Resistance Rds(on): 0.041ohm
- Rds(on) Test Voltage Vgs: -10V
- Threshold Voltage Vgs: -1.7V
- Power Dissipation Pd: 1.6W
- Transistor Case Style: SuperSOT
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Current Id Max: -4A
- Current Temperature: 25°C
- Full Power Rating Temperature: 25°C
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Pulse Current Idm: 20A
- SMD Marking: FDC658P
- Uni / Bi Directional Polarity: P
- Voltage Vds: 30V
- Voltage Vds Typ: 30V
- Voltage Vgs Max: -1.7V
- Voltage Vgs Rds on Measurement: -10V
- Voltage Vgs th Max: -3V
