FDC6306P - Dual MOSFET, P Channel, 20 V, 1.9 A - ONSEMI

ONSEMISKU: FDC6306P Order code: 9844929

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Sale price€1,39

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In stock (44167 units), ready to be shipped

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Description

  • Channel Type: P Channel
  • Continuous Drain Current Id: 1.9A
  • Continuous Drain Current Id N Channel: -
  • Continuous Drain Current Id P Channel: 1.9A
  • Drain Source On State Resistance N Channel: -
  • Drain Source On State Resistance P Channel: 0.127ohm
  • Drain Source Voltage Vds: 20V
  • Drain Source Voltage Vds N Channel: -
  • Drain Source Voltage Vds P Channel: 20V
  • Gate Source Threshold Voltage Max: 900mV
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 6Pins
  • On Resistance Rds(on): 0.127ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation N Channel: -
  • Power Dissipation P Channel: 960mW
  • Power Dissipation Pd: 960mW
  • Product Range: -
  • Qualification: -
  • Rds(on) Test Voltage: 4.5V
  • Transistor Case Style: SuperSOT
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: P Channel

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