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BSM180D12P3C007 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 180 A, 1.2 kV, Module - ROHM
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BSM180D12P3C007 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 180 A, 1.2 kV, Module - ROHM

BSM180D12P3C007 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 180 A, 1.2 kV, Module - ROHM

ROHMSKU: BSM180D12P3C007 Order code: 3573221
Price:
€761,31

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Description

  • Channel Type: Dual N Channel
  • Continuous Drain Current Id: 180A
  • Drain Source On State Resistance: -
  • Drain Source Voltage Vds: 1.2kV
  • Gate Source Threshold Voltage Max: 5.6V
  • MOSFET Module Configuration: Half Bridge
  • No. of Pins: -
  • On Resistance Rds(on): -
  • Operating Temperature Max: 150°C
  • Power Dissipation: 880W
  • Power Dissipation Pd: 880W
  • Product Range: -
  • Rds(on) Test Voltage: -
  • Transistor Case Style: Module
  • Transistor Polarity: Dual N Channel

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